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LinAmp Technologies is the leading designer of standarized Power Amplifier Modules (PAMs) for use in 2G, 3G, and 4G base station amplifiers. Our UMTS power amplifier modules have been deployed in networks across the globe since 2008. In addition, we have developed and marketed a range of low and high power PAMs.
We use both LDMOS and GaN devices and offer a wide range of custom made products serving the commercial as well as medical and military markets. Please refer to our product portfolio for further details. |
By partnering with reputable United States based contract manufacturers, we aim to provide a low-cost PAM solution that can be adapted for use in a myriad of different amplifier systems. The PAM efficiency and linearity can be enhanced by application of analogue or digital predistortion. The analogue solution is suitable for applications where modest performance is required. The DPD would offer a higher level of precision leading to even higher efficiencies.
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Standard Power Amplifier Modules
| Model | Frequency (MHZ) | Power (W) AVERAGE | Gain (dB) | Size (L''xW''xH'') | Features | Availability | Link |
|---|---|---|---|---|---|---|---|
| HELTE-5 | 728-768 | 2-8 | 40 | 5 x 3 x 0.75 | - LTE Band 12, 13, 14, & 17 - Integrated Linearizer |
10 Weeks | |
| HELTE-40 | 728-768 | 40 | 46 | 10x 7.5 x 1.0 | - LTE Band 12, 13, 14, & 17 - Integrated Linearizer |
6 Weeks | |
| HEPCS-5 | 1930-1990 | 2-5 | 50 | 5 x 3 x 0.75 | - LTE Band 2 - Integrated Linearizer |
10 Weeks | |
| HEPCS-40 | 1930-1990 | 40 | 50 | 8.25 x 3.5 x 1.0 | - LTE Band 2 - External Linearizer Module |
4 Weeks | |
| HEUMTS-5 | 2110-2170 | 2-5 | 40 | 5 x 3 x 0.75 | - LTE Band 1 and 4 - Integrated Linearizer |
10 Weeks | |
| HEUMTS-60 | 2110-2170 | 60 | 53 | 8.25 x 3.5 x 1.0 | - LTE Band 2 - External Linearizer |
In Stock | |
| HEWM2-5 | 2620-2690 | 2-5 | 40 | 5 x 3 x 0.75 | - LTE Band 7 - Integrated Linearizer |
10 Weeks | |
| HEWM2-40 | 2620-2690 | 40 | 50 | 8.25 x 3.5 x 1.0 | - LTE Band 2 - External Linearizer |
2 Weeks |